IPB50N10S3L16ATMA1
- Manufacturer's number
- Manufacturer Infineon Technologies
- Detailed MOSFET N-CH 100V 50A TO263-3
- Detailed Description N-Channel 100 V 50A (Tc) 100W (Tc) Surface Mount PG-TO263-3-2
Documents & Media
Documents & Media
| RESOURCE TYPE | LINK |
|---|---|
| Datasheets | IPx50N10S3L-16 |
| Other Related Documents | Part Number Guide |
| Environmental Information | RoHS Certificate |
| Featured Product | Data Processing Systems |
| HTML Datasheet | IPx50N10S3L-16 |
| Simulation Models | OptiMOS-T-100V-Spice Model |
Product Attributes
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TYPE
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DESCRIPTION
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SELECT
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|---|---|---|
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Category
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Mfr
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Series
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Package
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Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
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Product Status
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Active
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FET Type
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Technology
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MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
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Current - Continuous Drain (Id) @ 25°C
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Drive Voltage (Max Rds On, Min Rds On)
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4.5V, 10V
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Rds On (Max) @ Id, Vgs
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15.4mOhm @ 50A, 10V
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Vgs(th) (Max) @ Id
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2.4V @ 60µA
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Gate Charge (Qg) (Max) @ Vgs
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64 nC @ 10 V
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Vgs (Max)
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±20V
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Input Capacitance (Ciss) (Max) @ Vds
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4180 pF @ 25 V
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FET Feature
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-
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Power Dissipation (Max)
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100W (Tc)
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Operating Temperature
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-55°C ~ 175°C (TJ)
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Mounting Type
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Supplier Device Package
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PG-TO263-3-2
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Package / Case
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Base Product Number
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Product inquiry
